Intel fremstiller 65nm SRAM chips

Intel har annonceret at de har fremstillet de første SRAM chips baseret på 65nm teknologi. Disse chips blev fremstillet på Intels udviklingsfabrik i Hillsboro, Oregon, som benytter 300 mm wafers. Produktionen af SRAM chips baseret på 65nm vil først starte i 2005, men at Intel allerede nu mestrer 65nm teknologi, er givetvis et godt tegn for processor-fabrikanten.

The SRAM have a .57µ2 cell size, and are 4 Mbit chips. Each cell only has six transistors ? Intel's analogy is that 10 million such chips would fit inside the tip of a Biro.

According to Sunlin Chou, general manager of Intel's technology group, the 65 nano process extends the life of Moore's Law.

The chips will use transistors with gate lengths of 35 nanometers. The process will integrate eight copper interconnect while the low-k dielectric will cut down on power consumption and increase signal speeds inside the chips.

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