IBM påstår at de med en chip på 3 x 20 nm kan lave en chip der er op til 500 gange hurtigere en nutidens flashram. Newz.dk skriver at det er hvad chipmålet for 2015 er. IBM kalder dem phase change, hvilket hurtigt leder os på mere eksotiske tanker end flashram.
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Today we unveil a new phase-change memory material that has high performance even in an extremely small volume. This should ultimately lead to phase-change memories that will be very attractive for many applications ."
Link:
http://www.betanews.com/article/IBM_Announces_Memory_Chip_Advancement/1165869516
http://newz.dk/forum/item/68221/#